Multi-Stack InTe Selector-Only Memory (SOM) Achieving Ultra-Low Power Operation (10 μa) and Excellent Endurance (∼ 1010 cycles)

초록

We present an innovative In-Te based selector-only memory (SOM) featuring a multi-stack architecture that significantly boosts power efficiency and reliability. Through XPS, Raman spectroscopy and DFT simulation, we clarified how optimized In-Te bonding and trap engineering enable successful SOM operation while reducing write current (I<inf>write</inf>) to an ultra-low 10 μ A. This approach also resulted in a sufficient memory window (MW 1 V), minimized variability, and achieved excellent endurance (-1010 cycles). © 2025 JSAP.