Impact of Non-ideal Reliability Characteristics of SiOx p- Bit for Complex Optimization Problem Solver

초록

SiOx threshold switching (TS) devices generate periodic output voltage (V-out) spikes for a given input voltage (V-in) pulse. By introducing Ti scavenging layers to induce a variability component in the SiOx film, the number of spikes corresponding to the probability begins to be elaborately tuned in a sigmoid manner as a function of V-in amplitude. Thus, Ti/SiOx/Ti TS device can serve as probabilistic bit (p-Bit), which play an important role in solving complex optimization problems (COPs). We investigate the impact of the non-ideal SiOx p- Bit response on the COP by considering classified scenarios based on the measurement results.

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