Photoluminescence of amorphous carbon nitride (a-C:N) thin films grown by facing target sputtering method

초록

In this study, amorphous carbon nitride (a-C:N) thin films were deposited on glass substrates by using a facing target sputtering technique, and the effects of growth temperature were investigated. The deposition rate of the films gradually increased from 1.6 nm/min to 5 nm/min with increasing growth temperature. Emission peaks in the PL spectra of a-C:N films were found at 2.6 eV (green), 3.0 eV (blue), and 3.2 eV (UV). The blue and the UV emissions exhibited an inverse relationship with increasing growth temperature. The ratio of [N]/[C+N] increased from 11% to 15% with increasing to growth temperatures, and this implied an increase of C-N bonding in the films. As the growth temperature was increased, double-bonded nitrogen (N<inf>d</inf>, =N-) and triple-bonded nitrogen (Nt, -N<) showed an inverse relationship, and the ratio of [Nt]/[N<inf>d</inf> + Nt] increased from 80% to 93%. This tendency was similar to the relationship between the blue and the UV emissions according to growth temperature. Thus, the ratio of Nt and the intensity of UV emission are thought to be closely related, and these changes are thought to play a major role in determining the optoelectronic properties of the films. © This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

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