Mg-ion irradiation of SnO2 nanowires for enhanced H2S gas sensing

초록

SnO2 nanowires (NWs) were synthesized via a vapor-liquid-solid growth mechanism and subsequently irradiated with varying Mg-ion doses (1014 and 1016 ions/cm2). At a low dose of 1014 ions/cm2, Mg2+ ions substitute for Sn4+ ions, leading to an increase in oxygen vacancies. In contrast, at a high dose of 1016 ions/cm2, Mg2+ can no longer substitute for Sn4+; instead, SnO2 NWs change from single-crystalline to poly-crystalline. According to the dihydrogen sulfide (H2S) gas-sensing results, the pristine SnO2 NWs exhibited a response of 1.38-2 ppm of H2S at 300 degrees C. In contrast, the low-dose-irradiated sensor achieved its highest response of 1.60-2 ppm of H2S at 100 degrees C. However, the high-dose-irradiated sensor showed no response at 100 degrees C, and its maximum response of 1.02 occurred at 300 degrees C under the same gas conditions. This study underscores the potential of Mg irradiation to improve the sensing performance of SnO2 NWs, offering insights that may be extended to other similar systems.

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