Single-Power-Supply Compatible Cryogenic In0.8Ga0.2As Quantum-well HEMTs with Record Combination of high-frequency and low-noise performance for quantum-computins applications

초록

We present L<inf>g</inf>=45 nm E-mode cryogenic In 0sGa<inf>02</inf>As quantum-well (QW) HEMTs with the record combination of high-frequency and low-noise characteristics. The fabricated devices exhibited a true E-mode operation, the best balance between f<inf>T</inf>= 662 GHz and f<inf>max</inf>= 653GHz, and the lowest √I<inf>D</inf>/g<inf>m</inf>=0.176 at 4 K. Besides, we investigated the temperature-dependent behavior. Three-layer model indicated that the reduction of ρ <inf>barrier</inf> was critical to lower R<inf>s</inf> at 4 K. According to the delay time analysis, the improvement of f<inf>T</inf> was mainly due to the mitigation of the extrinsic channel charging delay, arising from the enhanced carrier transport at 4 K. © 2024 IEEE.