5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors

초록

We present highly scalable 5-level stacked gate-all-around (GAA) In<inf>0.53</inf>Ga<inf>0.47</inf>As multi-bridged channel FETs (MBCFETs) with superior device performance. At the heart of integration process, we maintained temperature of all the unit process under 300 ℃ and inserted an n-InP ledge into a top In<inf>0.52</inf>Al<inf>0.48</inf>As sacrificial layer to prevent fluorine migration phenomenon. Moreover, a selectively regrown n+In<inf>0.53</inf>Ga<inf>0.47</inf>As was used in the source/drain regions via MOCVD, together with a precision dry etching at 200 ℃. Particularly, the dry etching process resulted in a highly vertical etching slope along both the S/D and W<inf>g</inf> directions. The fabricated L<inf>g</inf> = 60 nm MBCFET exhibited excellent DC figures-of-merit (FOMs) with a combination of R<inf>ON</inf> = 35 Ω·μm, S = 75 mV/decade, g<inf>m_max</inf> = 19.4 mS/μm & I<inf>on</inf> = 2.81 mA/μm at both V<inf>DS</inf> and V<inf>GS</inf> = 0.5 V, yielding Q (g<inf>m_max</inf>/S) = 258 mS·dec./V·μm. © 2024 International Conference on Compound Semiconductor Manufacturing Technology. All Rights Reserved.

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