Effect of In-Situ Silicon Carbon Nitride (SiCN) Cap Layer on Performances of AlGaN/GaN MISHFETs

초록

AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors (MISHFETs) with different thickness of in-situ silicon carbon nitride (SiCN) cap layer were investigated. It was found that in-situ SiCN layer not only increases the two dimensional electron gas (2DEG) density, but also effectively passivates the surface of the AlGaN/GaN MISHFET. The fabricated device with 2 nm-thick SiCN cap layer exhibits superior device performances, such as larger maximum transconductance (g(m)) and higher on/off drain-current ratio (I-ON/I-OFF) compared to those of the device without SiCN cap layer.

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