Comprehensive study of components affecting extrinsic transconductance in In0.7Ga0.3As quantum-well high-electron-mobility transistors for image sensor applications

초록

The components affecting the extrinsic transconductance (g<inf>m_ext</inf>) in In<inf>0.7</inf>Ga<inf>0.3</inf>As quantum-well (QW) high-electron-mobility transistors (HEMTs) on an InP substrate were investigated. First, comprehensive modeling, which only requires physical parameters, was used to explain both the intrinsic transconductance (g<inf>m_int</inf>) and the <inf>gm_ext</inf> of the devices. Two types of In<inf>0.7</inf>Ga<inf>0.3</inf>As QW HEMT were fabricated with gate lengths ranging from 10 μm to sub-100 nm. These measured results were correlated with the modeling to describe the device behavior using analytical expressions. To study the effects of the components affecting g<inf>m_int</inf>, the proposed approach was extended to projection by changing the values of physical parameters, such as series resistances (R<inf>S</inf> and R<inf>D</inf>), apparent mobility (μ<inf>n_app</inf>), and saturation velocity (v<inf>sat</inf>). © 2021, Korean Sensors Society. All rights reserved.

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