Improved thermal reliability in base contact of full 3-inch InP Double-HBTs with fT and fmax in excess of 300 GHz

초록

In this paper, we have structurally and electrically examined the thermal degradation of platinum-based ohmic contacts for base layers of InP DHBTs. The results show that the degradation of the base contact is caused by the formation of an inhomogeneous Au-InGaAs alloy. It was also found that the contact resistance degradation could be effectively suppressed by inserting a molybdenum diffusion barrier. We demonstrate an InP DHBT on a 3-inch InP substrate via stepper-based photolithography with an improved base ohmic contact. The fabricated DHBTs (W<inf>E</inf> = 1.0 μm and L<inf>E</inf> = 15 μm) exhibit high current gain (β) = 57 at V<inf>CE</inf> = 1.0 V. Excellent f<inf>T</inf> of 331 GHz and f<inf>max</inf> of 310 GHz are obtained at J<inf>C</inf> = 3.2 mA/μm2 and V<inf>CE</inf> = 1.4 V. © 2024 International Conference on Compound Semiconductor Manufacturing Technology. All Rights Reserved.

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