The Study of Crystallization of Cu2ZnSnS4 Thin Film Using Low-cost Diode Laser (408 nm)

초록

In this study, Cu2ZnSnS4 (CZTS) thin films were fabricated using a solution process and a laser annealing process. The physical properties, including morphology and crystallinity, and optical properties of the films were investigated according to laser treatment time. The precursors (CuCl2, ZnCl2, SnCl2, and thiourea), solvent (2-methoxyethanol), and stabilizer (ethanolamine) were used to prepare the CZTS solution. The CZTS films were fabricated on glass substrates using the spray deposition method and annealed using a diode laser (408 nm, 500 mW) under vacuum conditions. The laser-annealed CZTS films had a kesterite structure with good crystallinity, and the optical bandgaps of the CZTS thin films were 0.99 – 1.11 eV. However, secondary crystalline phases were found in the thin film with a processing time of 500 ms. These results meant that optimization of the laser processing time was necessary. In conclusion, the laser annealing process had the potential to fabricate high-quality thin films without using a vacuum process, and laser-annealed CZTS thin films could be applied to high-efficiency solar cells. © 2022 The Korean Physical Society. All rights reserved.

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