Straw: A Stress-Aware WL-Based Read Reclaim Technique for High-Density NAND Flash-Based SSDs

  • Chun, Myoungjun; 
  • Lee, Jaeyong; 
  • Choi, Inhyuk; 
  • Park, Jisung; 
  • Kim, Myungsuk; 
  • 외 1명
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초록

Although read disturbance has emerged as a major reliability concern, managing read disturbance in modern NAND flash memory has not been thoroughly investigated yet. From a device characterization study using real modern NAND flash memory, we observe that reading a page incurs heterogeneous reliability impacts on each WL, which makes the existing block-level read reclaim extremely inefficient. We propose a new WL-level read-reclaim technique, called Straw, which keeps track of the accumulated read-disturbance effect on each WL and reclaims only heavily-disturbed WLs. By avoiding unnecessary read-reclaim operations, Straw reduces read-reclaim-induced page writes by 83.6% with negligible storage overhead.

키워드

Reliability; Flash memories; Three-dimensional displays; Stress; Stacking; Solid modeling; Tunneling; Target tracking; Semiconductor device measurement; Reliability engineering; Data reliability; NAND flash memory; read disturbance; solid-state drive (SSD)
제목
Straw: A Stress-Aware WL-Based Read Reclaim Technique for High-Density NAND Flash-Based SSDs
저자
Chun, Myoungjun; Lee, Jaeyong; Choi, Inhyuk; Park, Jisung; Kim, Myungsuk; Kim, Jihong
DOI
10.1109/LCA.2024.3516205
발행일
2025-01
유형
Article
저널명
IEEE Computer Architecture Letters
권
24
호
1
페이지
5 ~ 8