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Straw: A Stress-Aware WL-Based Read Reclaim Technique for High-Density NAND Flash-Based SSDs
- Chun, Myoungjun;
- Lee, Jaeyong;
- Choi, Inhyuk;
- Park, Jisung;
- Kim, Myungsuk;
- 외 1명
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2초록
Although read disturbance has emerged as a major reliability concern, managing read disturbance in modern NAND flash memory has not been thoroughly investigated yet. From a device characterization study using real modern NAND flash memory, we observe that reading a page incurs heterogeneous reliability impacts on each WL, which makes the existing block-level read reclaim extremely inefficient. We propose a new WL-level read-reclaim technique, called Straw, which keeps track of the accumulated read-disturbance effect on each WL and reclaims only heavily-disturbed WLs. By avoiding unnecessary read-reclaim operations, Straw reduces read-reclaim-induced page writes by 83.6% with negligible storage overhead.
키워드
Reliability; Flash memories; Three-dimensional displays; Stress; Stacking; Solid modeling; Tunneling; Target tracking; Semiconductor device measurement; Reliability engineering; Data reliability; NAND flash memory; read disturbance; solid-state drive (SSD)
- 제목
- Straw: A Stress-Aware WL-Based Read Reclaim Technique for High-Density NAND Flash-Based SSDs
- 저자
- Chun, Myoungjun; Lee, Jaeyong; Choi, Inhyuk; Park, Jisung; Kim, Myungsuk; Kim, Jihong
- 발행일
- 2025-01
- 유형
- Article
- 권
- 24
- 호
- 1
- 페이지
- 5 ~ 8
- 언어
- ENG
- 출판사
- IEEE COMPUTER SOC
- 발행국가
- 미국
- 분량
- 4 페이지
- ISSN
- E 1556-6064
P 1556-6056