Reliability-Ensured and Fast (< 100 ns) Analog Synpase for Training Accelerators : All-Sputtered HfOy/HfOx RRAM

초록

We reveal that sputtered HfOx, which has been often neglected in resistive random access memory (RRAM) design, can be an alternative for highly reliable and fast (< 100 ns) analog synapses to accelerate training algorithms. The substoichiometric HfOx enables rapid current update owing to the abundant oxygen vacancies (V0). Additional HfOy layer with increased stoichiometry makes uniformly distributed V0 profile across the entire HfOy/HfOx RRAM stack, enhancing reliability in dynamic synaptic operation, where multiple pulses are continuously addressed. This not only results in robust device-to-device/ cycle-to-cycle uniformity, but also ensures multilevel retention, which is further validated by real-time transient current analysis.

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