Effect of Sn content on the electrical properties of In-Ga-Sn-O thin-film transistors fabricated via rf-magnetron sputtering

초록

In this study, we systematically investigate the role of Sn content in tuning the electrical performance of In-GaSn-O (IGTO) thin-film transistors (TFTs), a potential alternative to the widely used In-Ga-Zn-O (IGZO) oxide TFTs in the display industry. By systematically varying the compositional ratios of In, Ga, and Sn, we aim to achieve high field-effect mobility and address the performance limitations of IGZO. To evaluate these effects, we prepare sputtering targets using a conventional sintering method with different ratios of In, Ga, and Sn. These targets are deposited onto glass substrates using an RF-magnetron sputtering system to analyze the structural and electrical properties. Additionally, a 20 nm-thick channel layer is deposited on a Si wafer to fabricate TFTs, and their electrical performance and stability are evaluated using measured transfer curves.

키워드