Proactively Invalidating Dead Blocks to Enable Fast Writes in STT-MRAM Caches

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초록

Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a promising emerging memory technology for on-chip caches. It has a low read access time and low leakage power. Unfortunately, however, STT-MRAM suffers from its long write latency and high write energy consumption. This paper proposes a cache management technique called Proactive Invalidation (PROI) that proactively invalidates dead blocks in advance to enable fast writes in the STT-MRAM caches. Experimental evaluation shows that the proposed technique improves performance by 14% on average compared to the baseline STT-MRAM cache. This paper also proposes two optimization techniques called Proactive Invalidation-aware Data Encoding (PIDE) and Narrowness-aware Partial Write (NPW) to minimize the energy overheads of Proactive Invalidation. Experimental results demonstrate that the total energy consumption of the STT-MRAM cache with PROI is only 1.8% higher than the baseline when PROI is applied with PIDE and NPW.

키워드

Switches; Random access memory; Magnetic tunneling; Energy consumption; Resistance; System-on-chip; Transistors; On-chip cache; non-volatile memory; STT-MRAM; dead block; narrow-width value; PERFORMANCE; ENERGY; MEMORY
제목
Proactively Invalidating Dead Blocks to Enable Fast Writes in STT-MRAM Caches
저자
Kim, Yongjun; Chen, Yuze; Lee, Yongho; Peng, Limei; Hong, Seokin
DOI
10.1109/ACCESS.2022.3158493
발행일
2022
유형
Article
저널명
IEEE Access
권
10
페이지
29419 ~ 29431