Effects of iodine doping on structural and electrical characteristics of solution-processed indium oxide thin-film transistors and its potential application for iodine sensing

초록

This study investigated the influence of solution-processed indium oxide (In2O3) thin-film transistors (TFTs) with various iodine vapor (I2) doping times. Prolonged iodine doping time is found to induce some important changes in the devices: (i) increase in In2O3 film thickness and nanoparticle size; (ii) decrease in the metal-hydroxyl bonding and increase in the metal-oxygen bonding; (iii) the positive moved threshold voltage, lower field-effect mobility, and higher on/off current ratio from 0 s (sec) to 10 s. Furthermore, vacuum thermal treatment, as a facial, novel method to recover the electrical performances of I2-doped In2O3 TFTs was examined. I2-doped In2O3 TFTs for 10 s with vacuum thermal treatment at 200 degree celsius exhibited excellent recovery properties of electrical. The results indicate that iodine doping can change the electrical properties of In2O3 TFTs and could potentially be used for I2 gas sensor.

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