Vertical homo-junction In0.53Ga0.47As tunneling field-effect transistors with minimum subthreshold swing of 52 mV/decade

초록

In this work, we successfully fabricated vertical homo-junction In<inf>0.53</inf>Ga<inf>0.47</inf>As tunneling field-effect transistors (TFETs) by a top-down approach. We particularly focused on recovery of the sidewall damage induced during dry etching of the In<inf>0.53</inf>Ga<inf>0.47</inf>As layer. The recovery steps comprised a series of digital etching cycles, short wet etching of the In<inf>0.53</inf>Ga<inf>0.47</inf>As layer, and (NH<inf>4</inf>)<inf>2</inf>S-based treatment. The fabricated device with a gate length of 100 nm exhibited a minimum subthreshold swing of 52 mV/decade at room temperature and an average subthreshold swing of 60 mV/decade over more than two decades of drain current. We also fabricated and analyzed In<inf>0.53</inf>Ga<inf>0.47</inf>As metal-oxidesemiconductor capacitors and metal-oxidesemiconductor field-effect transistors to investigate the effect of the S-treatment on their electrical characteristics. © 2022 Elsevier Ltd

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