A Temperature-Compensated LDO without External Reference for Compact SoC Design in 65nm CMOS

초록

This paper presents a low-dropout (LDO) regulator with an embedded voltage reference (EVR), designed for system-on-chip (SoC) architectures requiring highperformance operation. The proposed design integrates the voltage reference directly into the error amplifier (EA), enabling the generation of a 0.95 V output from a 1.05 V input while maintaining a low temperature coefficient and robust loop stability. The circuit comprises a proportional-to-absolutetemperature (PTAT) current generator, an EVR-based EA, and a power MOSFET. The LDO has been implemented in 65nm CMOS process. The simulation results demonstrate a stable output voltage of 0.95 V with a TC of 218 ppm/°C over a wide temperature range from -60°C to 120°C. A peak current efficiency of 99.99 % is obtained, maintaining stable operation and current driving capability up to 220 mA.

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