Impact of Output Conductance on Current-Gain Cut-Off Frequency in InxGa1-xAs/In0.52Al0.48As Quantum-Well High-Electron-Mobility Transistors on InP Substrate

초록

In this study, we investigated the impact of intrinsic output conductance (g<inf>oi</inf>) on the short-circuit current-gain cut-off frequency (f<inf>T</inf>) in In<inf>x</inf>Ga<inf>1-x</inf>As/In<inf>0.52</inf>Al<inf>0.48</inf>As quantum-well (QW) high-electron-mobility transistors. At its core, we attempted to extract values of f<inf>T</inf> using a simplified small-signal model (SSM) of the HEMTs and to derive an analytical formula for f<inf>T</inf> in terms of extrinsic model parameters that are related with intrinsic model parameters of a general SSM. We projected how f<inf>T</inf> was influenced by g<inf>oi</inf> in HEMTs, emphasizing that the improvement in electrostatic integrity would also be of critical importance to fully benefit from scaling down L<inf>g</inf>. © 2023 by the authors.

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