Lg= 60 nm In0.53Ga0.47As MBCFETs: From gm-max= 13.7 mS/μm and Q = 180 to virtual-source modeling

초록

In this paper, we report scalable 5 -level stacked gate-all-around (GAA) In 0.53 Ga0.47As multi-bridge channel FETs (MBCFETs), with careful attention paid to fluorine migration. At its heart, we maintained temperature of all the unit process steps below 300 °C and inserted an n-InP ledge into a top In0.52Al0.48As sacrificial layer to suppress F- -induced donor passivation. In addition, we used a selectively regrown n+In0.53Ga0.47 As contact formation by MOCVD and precision dry etching. The dry etching process resulted in a highly vertical etching slope along both the S/D and Wg directions. The fabricated Lg=60nm MBCFET showed a record combination of S=76mV/dec, gm-max=13.7 mS/mum, ION=2.24mA/mum and Q=180 at VDS=0.5V. © 2023 JSAP.