Gate oxide technology relieving word-line break in 10 nm-class DRAMs

Jang, Dongkyu; Park, Taehoon; Lee, Inkyum; Kim, Jongkyu; Ahn, Sang Bin; Lee, Jieun; Kim, Shindeuk; Ban, Hyodong; Woo, Sung Yun; Hong, Yoonki

doi:10.35848/1347-4065/ad9f6e

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Gate oxide technology relieving word-line break in 10 nm-class DRAMs

Jang, Dongkyu;
Park, Taehoon;
Lee, Inkyum;
Kim, Jongkyu;
Ahn, Sang Bin;
... Woo, Sung Yun;
외 4명

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초록

Modern dynamic random-access memories (DRAMs) have ultra-high densities due to the high integration of cell arrays, and the length of word-line (WL) has become considerably longer. In particular, maintaining the uniform line profile in the WL of modern 10 nm-class DRAMs is extremely challenging. In this paper, our goal is to investigate the causes of the WL break and propose a new method to solve it. We discuss a novel gate oxide (Gox) formation technology that is able to relieve the WL wiggling and disconnection. 10 nm-class DRAMs are fabricated with the novel Gox technology, and their structure and characteristics are studied.

키워드

DRAM; gate oxide; word-line; 6F(2) array scheme; RELIABILITY

제목: Gate oxide technology relieving word-line break in 10 nm-class DRAMs

저자: Jang, Dongkyu; Park, Taehoon; Lee, Inkyum; Kim, Jongkyu; Ahn, Sang Bin; Lee, Jieun; Kim, Shindeuk; Ban, Hyodong; Woo, Sung Yun; Hong, Yoonki

DOI: 10.35848/1347-4065/ad9f6e

발행일: 2025-01-01

유형: Article

저널명: Japanese Journal of Applied Physics

권: 64

호: 1

언어: ENG

출판사: IOP Publishing Ltd

발행국가: 영국

ISSN: E 1347-4065
P 0021-4922