Synthesis of graphite on SiC particles by using the thermal-chemical vapor-deposition method with and it's dependence on temperature and time

초록

Owing to its high thermal stability, mechanical and chemical stability, and good photoelectric properties, silicon carbide (SiC) is currently receiving attention as a photocatalyst for nonmetallic semiconductor materials in various applications. In this research, graphite was synthesized on the surface of SiC particles via thermal chemical vapor deposition (thermal-CVD) with the intention of increasing the utility of SiC as a photocatalyst. The excellent properties of the SiC-graphite (SCG) produced were confirmed through various analyses. Synthesis of SCG was undertaken using various synthesis temperatures (800°C, 900°C, 1000°C, and 1100°C) and synthesis times (30, 60, 90, and 120 s). The research demonstrated that graphite could be formed on the SiC surface, thus expanding the areas in which SiC and C materials can be applied. © This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

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