Controllable Polarization Switching of Hafnia-Based Ferroelectric Bilayers

초록

For neuromorphic applications, achieving a precisely controllable remnant polarization (P-r) as well as coercive voltage (VC) is crucial to achieve a multilevel polarization in the ferroelectric layer (FL). Therefore, we introduce bilayered ferroelectric thin films with Zr-doped HfO2 (HZO) on top of Al-doped HfO2 (HAO), allowing the adjustment of Pr over a broad voltage range relative to the ramping voltage. In the bilayer ferroelectric HZO/HAO, polarization switching behavior occurs sequentially through each FL, which results in tunable Pr characteristics.