Stable switching behavior of low-temperature ZrO2 RRAM devices realized by combustion synthesis-assisted photopatterning

초록

We have realized efficient photopatterning and high-quality ZrO2 films through combustion synthesis and manufactured resistive random access memory (RRAM) devices with excellent switching stability at low temperatures (250 degrees C) using these approaches. Combustion synthesis reduces the energy required for oxide conversion, thus accelerating the decomposition of organic ligands in the UV-exposed area, and promoting the formation of metal-oxygen networks, contributing to patterning. Thermal analysis confirmed a reduction in the conversion temperature of combustion precursors, and the prepared combustion ZrO2 films exhibited a high proportion of metal-oxygen bonding that constitutes the oxide lattice, along with an amorphous phase. Furthermore, the synergistic effect of combustion synthesis and UV/O3 -assisted photochemical activation resulted in patterned ZrO2 films forming even more complete metal-oxygen networks. RRAM devices fabricated with patterned ZrO2 films using combustion synthesis exhibited excellent switching characteristics, including a narrow resistance distribution, endurance of 103 cycles, and retention for 105 s at 85 degrees C, despite low-temperature annealing. Combustion synthesis not only enables the formation of high-quality metal oxide films with low external energy but also facilitates improved photopatterning. (c) 2024 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology. This is an open access article under the CC BY-NC-ND license ( http://creativecommons.org/licenses/by-nc-nd/4.0/ )

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