A new methodology to extract saturation velocity of In0.53Ga0.47As QW HEMTs

초록

In this abstract, we investigated carrier transport properties for In<inf>0.53</inf>Ga<inf>0.47</inf>As quantum-well high-electron-mobility transistors (HEMTs), in the sense of effective mobility(μn_eff) and saturation velocity(vsat). Especially, characterize that the carrier transport properties in HEMTs do not account for the effect of each individual unit process and device integration and can be challenging for short-channel devices. To do so, we proposed a methodology that explained the L<inf>g</inf> scaling behavior of transconductance(gm) in saturation, enabling to the extraction of values of μn_eff and vsat. For a methodology of transconductance modeling, we fabricated In<inf>0.53</inf>Ga<inf>0.47</inf>As HEMTs with L<inf>g</inf> from 10 mm to sub-30 nm. This exhibited excellent agreement between measured and modeled g<inf>m</inf>, yielding physically meaningful values of μn_eff and vsat. To improve RF characteristics of HEMT devices, it is essential to increase gm performance together with analysis vsat using the proposed method in this work. © 2023 CS ManTech.

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