Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts

초록

In this paper, we report the fabrication and characterization of L<inf>g</inf> = 50 nm Gate-All-Around (GAA) In<inf>0.53</inf>Ga<inf>0.47</inf>As nanosheet (NS) metal-oxide-semiconductor field-effect transistors (MOSFETs) with sub-20 nm nanosheet thickness that were fabricated through an S/D regrowth process. The fabricated GAA In<inf>0.53</inf>Ga<inf>0.47</inf>As NS MOSFETs feature a bi-layer high-k dielectric layer of Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf>, together with an ALD-grown TiN metal-gate in a cross-coupled manner. The device with L<inf>g</inf> = 50 nm, W<inf>NS</inf> = 200 nm and t<inf>NS</inf> = 10 nm exhibited an excellent combination of subthreshold-swing behavior (S < 80 mV/dec.) and carrier transport properties (g<inf>m_max</inf> = 1.86 mS/μm and I<inf>ON</inf> = 0.4 mA/μm) at V<inf>DS</inf> = 0.5 V. To the best of our knowledge, this is the first demonstration of In<inf>x</inf>Ga<inf>1-x</inf>As GAA NS MOSFETs that would be directly applicable for their use in future multi-bridged channel (MBC) devices. © 2022 by the authors.

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