Complex oxide thin films: A review on pulsed laser epitaxy growth

초록

Pulsed laser epitaxy (PLE) has emerged as a pivotal technique in the fabrication of complex oxide thin films, offering unprecedented control over material composition and myriads of properties. Complex oxides exhibit various functionalities, such as high-Tc superconductivity, colossal magnetoresistance, and ferroelectricity, making them essential for advanced electromagnetic and optical applications. PLE facilitates the epitaxial growth of complex oxides using a high-power pulsed laser to ablate a solid target, generating a plume of material that is deposited onto a heated substrate. The process is highly adaptable and capable of achieving stoichiometric material in thin film form with high quality. This review explores the fundamental principles, system configurations, and essential growth parameters of PLE and highlights its role in advancing the field of complex oxide thin films.

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