Lg = 25 nm In0.8Ga0.2As/In0.52Al0.48As High-Electron Mobility Transistors on InP Substrate with Both fT and fmax in Excess of 700 GHz

초록

We present an Lg = 25 nm In<inf>0.8</inf>Ga<inf>0.2</inf>As/In<inf>0.52</inf>Al<inf>0.48</inf>As HEMT on a 3-inch InP substrate that delivers excellent high-frequency characteristics. The device exhibited a value of maximum transconductance (gm_max) = 2.4 mS/μm at VDS = 0.5 V and on-resistance (RON) = 294 Ω∙μm. At VGS = 0.15 V and VDS = 0.5 V, the same device displayed an excellent combination of cut-off frequency (fT) = 709 GHz and maximum-oscillation frequency (fmax) = 702 GHz. At its core, the indium-rich In<inf>0.8</inf>Ga<inf>0.2</inf>As composite channel with superior Hall mobility (μn_Hall) of 13,500 cm2V-1s-1 at 300 K was implemented, and the gate length (Lg) was successfully scaled down to 25 nm while maintaining the electrostatic integrity of the device. © 2023 CS ManTech.

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