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A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm Psat and 24.3 % PAE in a 250-nm InP HBT Technology
- Hemelhof, Arno;
- Park, Sehoon;
- Zhang, Yang;
- Ingels, Mark;
- Gramegna, Giuseppe;
- 외 3명
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5초록
This paper presents a high-power high-efficiency stacked D-band power amplifier (PA) in a 250-nm HBT technology. The pseudo-differential PA is 2-way power-combined with a power combining network exhibiting a single-transformer footprint and a low loss by reflecting asymmetry leaking to the common mode. The presented PA has a saturated output power of 20.9 dBm and a peak power-added efficiency (PAE) of 24.3 %. A small-signal gain of 14.2 dB is obtained with a 3-dB bandwidth of 19 GHz.
키워드
power amplifier; D-band; InP; millimeter-wave; stacked PA; common-base
- 제목
- A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm Psat and 24.3 % PAE in a 250-nm InP HBT Technology
- 저자
- Hemelhof, Arno; Park, Sehoon; Zhang, Yang; Ingels, Mark; Gramegna, Giuseppe; Vaesen, Kristof; Yan, Dongyang; Wambacq, Piet
- 발행일
- 2024
- 유형
- Proceedings Paper
- 저널명
- 2024 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM, BCICTS
- 페이지
- 185 ~ 188
- 언어
- ENG
- 출판사
- IEEE
- 발행국가
- 미국
- 분량
- 4 페이지
- ISSN
- P 2831-4972