Hydrothermal Synthesis in Gap: Conformal Deposition of Textured Hematite Thin Films for Efficient Photoelectrochemical Water Splitting

  • Kong, Heejung; 
  • Park, Ji-Sang; 
  • Kim, Jong Hwa; 
  • Hwang, Suwon; 
  • Yeo, Junyeob
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초록

Obtaining high performance of hematite (alpha-Fe2O3) in a photoelectrochemical (PEC) water splitting cell is a challenging task because of its poor electrical conductivity and extremely short carrier lifetime. Here, we introduce a new hydrothermal method, called gap hydrothermal synthesis (GAP-HS), to obtain textured hematite thin films with an outstanding PEC water oxidation performance. GAP-HS proceeds in a precursor-solution-filled narrow gap to induce an anisotropic ion supply. This gives rise to an interesting phenomenon associated with the growth of nanomaterials that reflect the texture of the used substrates. Also, GAP-HS causes the preferential growth of hematite crystal along the [110] direction, leading to improved electrical conductivity within the (001) basal plane. The hematite thin films obtained via GAP-HS exhibit a very high photocurrent of more than 1.3 mA cm(-2) at 1.23 V with respect to the reversible hydrogen electrode with 550 degrees C annealing only. It is the highest photocurrent, to the best of our knowledge, obtained for the hydrothermally synthesized pristine hematite photoanode. Because the low-temperature annealing allows avoiding of substrate deformation, the hematite thin films obtained via GAP-HS are expected to be advantageous for tandem-cell configuration.

키워드

hydrothermal synthesis; hematite thin films; preferential growth; photoanodes; photoelectrochemical water splitting; PHOTOANODES; CRYSTAL; OXIDATION; ULTRAFAST; HYDROGEN; MODEL
제목
Hydrothermal Synthesis in Gap: Conformal Deposition of Textured Hematite Thin Films for Efficient Photoelectrochemical Water Splitting
저자
Kong, Heejung; Park, Ji-Sang; Kim, Jong Hwa; Hwang, Suwon; Yeo, Junyeob
DOI
10.1021/acsami.2c00128
발행일
2022-04-13
유형
Article
저널명
ACS Applied Materials & Interfaces
권
14
호
14
페이지
16515 ~ 16526