광분해를 이용한 할라이드 페로브스카이트 박막의 패터닝 공정

초록

In this study, we present a simple and cost-effective patterning process for perovskite thin films using photo-induced decomposition. Using methylammonium lead iodide (MAPbI3) as a model material, we demonstrate that exposure to a halogen lamp light through a shadow mask selectively decomposes the exposed regions into MAI and PbI2, while the masked regions remain intact. Subsequent immersion in isopropyl alcohol (IPA) selectively dissolves MAI, leaving behind PbI2 as an insulating layer. The patterned MAPbI3 films retained their original crystal structure and optical properties. This method was applied to fabricate MAPbI3-based resistive switching device arrays, successfully demonstrating ON/OFF operations under applied voltages. By utilizing the perovskite film itself as a photoresist and IPA as a developer, this approach eliminates the need for conventional photolithography chemicals and equipment, enhancing its practicality and scalability. With further refinement, this technique has the potential to significantly advance the development of perovskite-based semiconductor devices.

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