Linear and Symmetric Weight Update of CuOx/HfOx/WOx ECRAM Synapse for Neuromophic Systems

초록

We demonstrate linear and symmetric weight update behavior in Cu-ion-driven electrochemical RAM (ECRAM) for neuromorphic computing systems. We specifically introduce CuOx gate to prevent excessive injection of Cu ions into the channel, thereby showing a highly controllable synaptic response. Our results also reveal that the injected Cu ions are involved in the analog switching.