고에너지 양성자 조사 하 SiC MOSFET의 SEE 민감도 및 고전압 항복 메커니즘 실시간 평가

초록

In this study, a remote real-time measurement environment was established to quantitatively evaluate the radiation hardness of 1.2 kV-class Silicon Carbide (SiC) power MOSFETs. High-energy proton irradiation and high-voltage stress tests were conducted, utilizing SourceMeter instruments, General Purpose Interface Bus (GPIB) communication, and Python-based control software to monitor the electrical characteristics of the devices in real time under radiation exposure. The experimental results revealed that single event effects (SEE) induced by electron-hole pair generation were observed under all test conditions. Notably, as a drain voltage increased, the time to the onset of SEE and displacement damage (DD) was significantly reduced. In particular, at 1000 V and 1100 V, the drain current rapidly increased to the preset threshold, resulting in permanent device failure. These findings indicate that the radiation reliability of SiC MOSFETs is closely related to device processing conditions and underscore the importance of design and process optimization to ensure reliability in extreme environments such as aerospace applications.

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