Enhanced switching ratio of sol-gel-processed Y2O3 RRAM device by suppressing oxygen vacancy formation at high annealing temperatures

초록

Sol-gel-processed Y2O3 films were used as an active-channel layer for resistive switching memory (RRAM) devices. The influence of post-annealing temperature on structural, chemical, and electrical properties was studied. Y2O3-RRAM devices comprising electrochemically active metal electrodes, Ag, and indium tin oxide (ITO) electrodes exhibited the conventional bipolar RRAM device operation. The fabricated Ag/Y2O3/ITO RRAM devices, which included 500 degrees C-annealed Y2O3 films, exhibited less oxygen vacancy and defect sites, reduced the leakage current, increased the high-/low-resistance state ratio of more than 10(5), and provided excellent nonvolatile memory properties without significant deterioration for 100 cycles and 10(4) s.

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