Material engineering to enhance reliability in 3D NAND flash memory

초록

Recent advancements in 3D NAND flash memory are driven by the need for higher storage density and faster data access speed, particularly to support emerging applications, such as artificial intelligence and memory- centric computing. As 3D NAND flash technology evolves, various technical problems related to process complexity have surfaced, such as those related to reliability. In this review, we focus on the individual storage unit known as a "cell device"and the reliability issues that arise with increasing memory density in 3D NAND flash. Attempts to address these challenges are outlined, focusing on the ONOP layers (tunneling/ trap/blocking/channel) materials that significantly impact reliability. However, the materials currently utilized for ONOP layers are faced with physical property limitations, necessitating the introduction of novel materials and processes for each ONOP layer.

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