Improvement of the Symmetry and Linearity of Synaptic Weight Update by Combining the InGaZnO Synaptic Transistor and Memristor

  • Yang, Tae Jun; 
  • Cho, Jung Rae; 
  • Lee, Hyunkyu; 
  • Lee, Hee Jun; 
  • Myoung, Seung Joo; 
  • ... Woo, Jiyong; 
  • 외 6명
Citations

WEB OF SCIENCE

13
Citations

SCOPUS

16

초록

Obtaining symmetrical and highly linear synapse weight update characteristics of analog resistive switching devices is critical for attaining high performance and energy efficiency of the neural network system. In this work, based on the two-terminal one transistor-one memristor (1T1M) block, the improvement of the symmetry and linearity of synaptic weight update is demonstrated by combining the InGaZnO synaptic transistor and memristor. Due to the symmetric and linear weight update characteristic, a pattern recognition accuracy of 88% is achieved after 50 epochs in the on-chip learning simulation of the hand-written digit images (MNIST) data set. The proposed 1T1M device saves the hardware burden and additional power consumption required to implement non-identical programming pulses.

키워드

InGaZnO thin-film transistors; nalog resistive switching synapse; symmetric and linear synaptic weight update; synaptic transistor; memristor; neural network; TEMPERATURE; MEMORY
제목
Improvement of the Symmetry and Linearity of Synaptic Weight Update by Combining the InGaZnO Synaptic Transistor and Memristor
저자
Yang, Tae Jun; Cho, Jung Rae; Lee, Hyunkyu; Lee, Hee Jun; Myoung, Seung Joo; Lee, Da Yeon; Choi, Sung-Jin; Bae, Jong-Ho; Kim, Dong Myong; Kim, Changwook; Woo, Jiyong; Kim, Dae Hwan
DOI
10.1109/ACCESS.2024.3366224
발행일
2024-03
유형
Article
저널명
IEEE Access
권
12
페이지
28531 ~ 28537