Ternary Toward Binary: Circuit-Level Implementation of Ternary Logic Using Depletion-Mode and Conventional MOSFETs

  • Lee, Hyundong; 
  • Kim, Seonghoon; 
  • Kim, Jongbeom; 
  • Jeong, Jaehoon; 
  • Yang, Jeonggyu; 
  • ... Song, Taigon
Citations

SCOPUS

9

초록

The application of artificial intelligence (AI) requires advanced computation to address complex problems. However, the improvement of binary computing systems supporting these applications is approaching their limits due to atomic-level scaling. Regarding this challenging situation, ternary computing is gaining more attention due to its better data saving/computing/moving capability. Thus, ternary logic based on various devices was proposed, but these circuits are still encountering issues of high-power consumption, low operating speed, and challenges in manufacturing compared to silicon-based circuits. Therefore, this paper presents a methodology for designing ternary logic based on Depletion-mode metal-oxide-semiconductor field-effect transistor (DEPFET) and multi-threshold voltage complementary metal-oxide-semiconductor (MTCMOS). Our silicon-based devices are easier to manufacture and support high-speed/low-power operations through our complementary ternary logic. Our balanced ternary full adder (BTFA) is 9.70 × better energy efficiency than the latestcarbon nanotube field-effect transistor (CNTFET) based BTFA. We also propose the first methodology to design a ternary cell layout in multi-height standard cell design. We propose an algorithm for the best ternary cell layout and a concept of integrated layout that reduces area when required cells are close to each other. © 2013 IEEE.

키워드

depletion-mode MOSFET; full-adder; layout; Multi-valued logic; ternary logic
제목
Ternary Toward Binary: Circuit-Level Implementation of Ternary Logic Using Depletion-Mode and Conventional MOSFETs
저자
Lee, Hyundong; Kim, Seonghoon; Kim, Jongbeom; Jeong, Jaehoon; Yang, Jeonggyu; Song, Taigon
DOI
10.1109/ACCESS.2024.3523344
발행일
2025-01
유형
Article
저널명
IEEE Access
권
13
페이지
1193 ~ 1207