상세 보기
A W-Band Low-Noise Amplifier in 50-nm InP HEMT Technology
- Mehraban, Haniye;
- Park, Wan-Soo;
- Jo, Hyeon-Bin;
- Choi, Su-Min;
- Kim, Dae-Hyun;
- 외 4명
Citations
WEB OF SCIENCE
3Citations
SCOPUS
3초록
This paper presents a W-band low noise amplifier (LNA) in 50-nm InP high-electron-mobility-transistor (HEMT) technology. The LNA employs a threestage design in common-source (CS) configuration using 2x20 mu m transistors, coplanar waveguides (CPW), metal-insulator-metal capacitors (MIM), and NiCr-based thin film resistors (TFR). The first two stages employ inductive source feedback for concurrent noise and gain matching and in-band stability. The 3rd stage utilizes resistive parallel feedback. This design shows a simulated noise figure of 1.4 dB with a measured associated gain of 14 dB at 94 GHz while consuming a DC power of 75 mW.
키워드
Coplanar waveguide (CPW); high-electron-mobility transistor (HEMT); indium phosphide (InP); low noise amplifier (LNA); W-band
- 제목
- A W-Band Low-Noise Amplifier in 50-nm InP HEMT Technology
- 저자
- Mehraban, Haniye; Park, Wan-Soo; Jo, Hyeon-Bin; Choi, Su-Min; Kim, Dae-Hyun; Kim, Sang-Kuk; Yun, Jacob; Kim, Ted; Choi, Wooyeol
- 발행일
- 2023
- 유형
- Proceedings Paper
- 저널명
- 2023 IEEE TEXAS SYMPOSIUM ON WIRELESS AND MICROWAVE CIRCUITS AND SYSTEMS, WMCS
- 언어
- ENG
- 출판사
- IEEE
- 발행국가
- 미국
- ISSN
- P 2638-3845