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Displacement Damage Effects Induced by Proton Irradiation in β-Ga2O3 Schottky Barrier Diodes
- Kim, Young Jo;
- Kwon, Tae Seong;
- Woo, Sung Yun;
- Yoon, Young Jun;
- Seo, Jae Hwa
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1초록
In this study, vertical beta-Ga2O3 SBDs were fabricated and tested for radiation hardness under proton irradiation. Displacement damage led to degradation in current and capacitance, while the breakdown voltage increased due to higher resistance.
- 제목
- Displacement Damage Effects Induced by Proton Irradiation in β-Ga2O3 Schottky Barrier Diodes
- 저자
- Kim, Young Jo; Kwon, Tae Seong; Woo, Sung Yun; Yoon, Young Jun; Seo, Jae Hwa
- 발행일
- 2025
- 유형
- Proceedings Paper
- 저널명
- 2025 SILICON NANOELECTRONICS WORKSHOP, SNW
- 페이지
- 98 ~ 99
- 언어
- ENG
- 출판사
- IEEE
- 발행국가
- 미국
- 분량
- 2 페이지
- ISSN
- P 2161-4636