Super-steep synapses based on positive feedback devices for reliable binary neural networks

  • Kwon, Dongseok; 
  • Kim, Hyeongsu; 
  • Lee, Kyu-Ho; 
  • Hwang, Joon; 
  • Shin, Wonjun; 
  • ... Woo, Sung Yun; 
  • 외 2명
Citations

WEB OF SCIENCE

2
Citations

SCOPUS

2

초록

This work proposes positive feedback (PF) device-based synaptic devices for reliable binary neural networks (BNNs). Due to PF operation, the fabricated PF device shows a high on/off current ratio (2.69 x 10(7)). The PF device has a charge-trap layer by which the turn-on voltage (V-on) of the device can be adjusted by program/erase operations and a long-term memory function is implemented. Also, due to the steep switching characteristics of the PF device, the conductance becomes tolerant to the retention time and the variation in turn-on voltage. Simulations show that high accuracy (88.44% for CIFAR-10 image classification) can be achieved in hardware-based BNNs using PF devices with these properties as synapses.

키워드

FLASH MEMORY; NONVOLATILE
제목
Super-steep synapses based on positive feedback devices for reliable binary neural networks
저자
Kwon, Dongseok; Kim, Hyeongsu; Lee, Kyu-Ho; Hwang, Joon; Shin, Wonjun; Bae, Jong-Ho; Woo, Sung Yun; Lee, Jong-Ho
DOI
10.1063/5.0131235
발행일
2023-03-06
유형
Article
저널명
Applied Physics Letters
권
122
호
10