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Super-steep synapses based on positive feedback devices for reliable binary neural networks
- Kwon, Dongseok;
- Kim, Hyeongsu;
- Lee, Kyu-Ho;
- Hwang, Joon;
- Shin, Wonjun;
- ... Woo, Sung Yun;
- 외 2명
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2초록
This work proposes positive feedback (PF) device-based synaptic devices for reliable binary neural networks (BNNs). Due to PF operation, the fabricated PF device shows a high on/off current ratio (2.69 x 10(7)). The PF device has a charge-trap layer by which the turn-on voltage (V-on) of the device can be adjusted by program/erase operations and a long-term memory function is implemented. Also, due to the steep switching characteristics of the PF device, the conductance becomes tolerant to the retention time and the variation in turn-on voltage. Simulations show that high accuracy (88.44% for CIFAR-10 image classification) can be achieved in hardware-based BNNs using PF devices with these properties as synapses.
키워드
FLASH MEMORY; NONVOLATILE
- 제목
- Super-steep synapses based on positive feedback devices for reliable binary neural networks
- 저자
- Kwon, Dongseok; Kim, Hyeongsu; Lee, Kyu-Ho; Hwang, Joon; Shin, Wonjun; Bae, Jong-Ho; Woo, Sung Yun; Lee, Jong-Ho
- 발행일
- 2023-03-06
- 유형
- Article
- 권
- 122
- 호
- 10
- 언어
- ENG
- 출판사
- AIP Publishing
- 발행국가
- 미국
- ISSN
- E 1077-3118
P 0003-6951