In-situ electrical resistance monitoring of vanadium oxide reduction

초록

The reduction process of vanadium oxide was monitored by measuring its in-situ electrical resistance. V2O5 films deposited on c-Al2O3 were annealed in a hydrogen environment and exhibited a sharp decrease in resistance at similar to 350 degrees C, followed by a slight increase at similar to 460 degrees C. Subsequent analyses confirmed that the noticeable resistance changes during the annealing process could be attributed to the reduced vanadium oxidation states. These results indicate that the variations in the resistance of the vanadium oxide films are directly related to the changes in their oxidation states. Therefore, in-situ electrical measurements can provide insights into the changes in the chemical state of vanadium oxide.

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