Enhanced Stability and Sensitivity of AlGaN/GaN-HEMTs pH Sensor by Reference Device

초록

To improve the stability and sensitivity of pH sensors based on AlGaN/GaN high electron mobility transistors (HEMTs), we proposed a modified sensing structure by integrating a reference HEMT device. This structural pH sensor exhibits a typical Nernstian behavior with a sensitivity of 54.38 mV/pH, which is higher than the value of 49.43mV/pH derived from the AlGaN/GaN HEMT-based sensor without integrating the reference HEMTs device. Furthermore, the stability of the new structural sensor is enhanced by approximately 19.2 in comparison with that of its traditional counterpart. The improved performances are analyzed using an electrical double-layer model together with an equivalent circuit model, and we find that the new sensor structure has a larger capacitor and exhibits a better rectification effect, hence decreasing the electrical noise and enhancing the stability of the testing signal. Meanwhile, the new sensor structure displays a smaller equivalent resistance and results in a larger available output current, hence exhibiting a higher sensitivity.

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