Characterization of AlGaN/GaN HEMTs on 4-inch SiC substrate at Cryogenic temperature

초록

We present the systematic analysis of DC and carrier transport behavior of AlGaN/GaN HEMTs in room-temperature and Cryogenic temperature. The fabricated L<inf>g</inf> = 2 μm devices shows maximum-transconductance (g<inf>m_max</inf>) of 175 mS/mm and off-current (I<inf>off</inf>) of 10 μA/mm in comprision to g<inf>m_max</inf> of 298 mS/mm and I<inf>off</inf> of 1 nA/mm. Also, series resistance (R<inf>S</inf>) is improved from 1.8 Ω∙mm at 300 K to 0.44 Ω∙mm at 4 K due to reduction of sheet resistance of access region. Carrier transport at 300 K and 4 K were evaluated through gm modeling, indicating that improvement of effective mobility (μ<inf>n_eff</inf>) and slightly improvement of saturation velocity (v<inf>sat</inf>). Here, we investigate AlGaN/GaN HEMTs behavior in Cryogenic temperature applications such as deep space reception, radio astronomy, and quantum computing. © 2024 International Conference on Compound Semiconductor Manufacturing Technology. All Rights Reserved.

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