A Physics-based Numerical Model of Resistive Switching Behavior in Electrochemical Metallization Memristor

초록

Electrochemical metallization (ECM)-based memristors enable energy-efficient in-memory computing, which is desirable for edge computing. However, a physics-based numerical model for ECM memristor is not well established. In this work, we developed the physics-based model for ECM memristor, which includes the effect of both Joule heating and electric field effects on ion migration to elucidate the dynamics of formation and dissolution of conductive filaments.