Enhancing Computing Capacity via Reconfigurable MoS2-Based Artificial Synapse with Dual Feature Strategy for Wide Reservoir Computing

  • Lee, Hyeonji; 
  • Oh, Jungyeop; 
  • Ahn, Wonbae; 
  • Kang, Mingu; 
  • Park, Seohak; 
  • ... Jang, Byung Chul; 
  • 외 3명
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초록

Reservoir computing (RC) has garnered considerable interest owing to its uncomplicated network structure and minimal training costs. Nevertheless, the computing capacity of RC systems is limited by the material-dependent physical dynamics of reservoir devices. In this study, an efficient neuromorphic reservoir device with adjustable reservoir states, achieved through the development of an electrically tunable three-terminal charge trap memory, is introduced. This device utilizes molybdenum disulfide (MoS2) as the channel material and a perhydropolysilazane-based charge trap layer. Notably, the absence of a tunneling layer in the device structure enables dynamic resistive switching, characterized by outstanding endurance and an excellent memory window. Furthermore, by implementing a simple input decay and refresh scheme, a reconfigurable neuromorphic device capable of multiple feature extraction and functioning as an artificial synapse is developed. The device's efficacy is validated through device-to-system-level simulations within a hardware-based wide RC (WRC) system, resulting in an improved recognition rate in the MNIST hand-written digit recognition task from 87.6% to 91.0%, a testament to the enhanced computing capacity. This strategic approach advances the development of hardware-based WRC systems, marking a significant step toward energy-efficient reservoir computing.

키워드

charge trap memory; molybdenum disulfide (MoS2); perhydropolysilazane (PHPS); reconfigurable synapse; wide reservoir computing; PERHYDROPOLYSILAZANE
제목
Enhancing Computing Capacity via Reconfigurable MoS2-Based Artificial Synapse with Dual Feature Strategy for Wide Reservoir Computing
저자
Lee, Hyeonji; Oh, Jungyeop; Ahn, Wonbae; Kang, Mingu; Park, Seohak; Kim, Hyunmin; Yoo, Seungsun; Jang, Byung Chul; Choi, Sung-Yool
DOI
10.1002/adfm.202416811
발행일
2025-03
유형
Article
저널명
Advanced Materials for Optics and Electronics
권
35
호
10