상세 보기
자료 필터
자료유형
발행연도
2022 ~ 2025
2022 2025
키워드
언어
전체 57건 중 51번부터 57번까지의 결과를 표시합니다.
2022
Article
Fabrication and Performances of Recessed Gate AlGaN/GaN MOSFETs with Si3N4/TiO2 Stacked Dual Gate Dielectric
- An, Hee Dae ;
- Min, So Ra ;
- Lee, Sang Ho ;
- Park, Jin ;
- Kim, Geon Uk ;
- ... Jang, Jaewon ;
- ... Bae, Jin-Hyuk ;
- ... Kang, In Man ;
- 외 4명
- 2022-04
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- IEEK PUBLICATION CENTER
Article
Room-Temperature High-Detectivity Flexible Near-Infrared Photodetectors with Chalcogenide Silver Telluride Nanoparticles
- Lee, Won-Yong ;
- Kim, Kyoungdu ;
- Lee, Sin-Hyung ;
- Bae, Jin-Hyuk ;
- Kang, In-Man ;
- ... Jang, Jaewon ;
- 외 2명
- 2022-03-29
- ACS OMEGA
- AMER CHEMICAL SOC
Article
Environmentally and Electrically Stable Sol-Gel-Deposited SnO2 Thin-Film Transistors with Controlled Passivation Layer Diffusion Penetration Depth That Minimizes Mobility Degradation
- Lee, Won-Yong ;
- Kim, Do Won ;
- Kim, Hyeon Joong ;
- Kim, Kyoungdu ;
- Lee, Sin-Hyung ;
- ... Bae, Jin-Hyuk ;
- ... Kang, In-Man ;
- ... Jang, Jaewon ;
- 외 1명
- 2022-03-02
- ACS Applied Materials & Interfaces
- AMER CHEMICAL SOC
Article
Flexible Sol-Gel-Processed Y2O3 RRAM Devices Obtained via UV/Ozone-Assisted Photochemical Annealing Process
- Kim, Hyeon-Joong ;
- Lee, Won-Yong ;
- Kim, Do-Won ;
- Kim, Kyoungdu ;
- Lee, Sin-Hyung ;
- ... Bae, Jin-Hyuk ;
- ... Kang, In-Man ;
- ... Jang, Jaewon ;
- 외 1명
- 2022-03
- Materials
- MDPI
Article
Enhanced Switching Reliability of Sol-Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field
- Kim, Do-Won ;
- Kim, Hyeon-Joong ;
- Lee, Won-Yong ;
- Kim, Kyoungdu ;
- Lee, Sin-Hyung ;
- ... Bae, Jin-Hyuk ;
- ... Kang, In-Man ;
- ... Jang, Jaewon ;
- 외 1명
- 2022-03
- Materials
- MDPI
Article
Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO2/Si3N4 Dual-Layer Insulator
- Min, So-Ra ;
- Cho, Min-Su ;
- Lee, Sang-Ho ;
- Park, Jin ;
- An, Hee-Dae ;
- ... Jang, Jae-Won ;
- ... Bae, Jin-Hyuk ;
- ... Kang, In-Man ;
- 외 4명
- 2022-02
- Materials
- MDPI
Article
Enhanced switching ratio of sol-gel-processed Y2O3 RRAM device by suppressing oxygen vacancy formation at high annealing temperatures
- Kim, Kyoungdu ;
- Lee, Changmin ;
- Lee, Won-Yong ;
- Kim, Do Won ;
- Kim, Hyeon Joong ;
- ... Bae, Jin-Hyuk ;
- ... Kang, In-Man ;
- ... Jang, Jaewon ;
- 외 1명
- 2022-01
- Semiconductor Science and Technology
- IOP Publishing Ltd