강인만 프로필 사진

강인만

Kang Inman

대학원

전자전기공학부

Web Of Science Scopus ORCID

자료 필터

자료유형

발행연도

2022 ~ 2025
2022 2025

키워드

언어

전체 57건 중 1번부터 10번까지의 결과를 표시합니다.

2025
Article

Design and analysis of 3D stacked nanosheet-based capacitorless DRAM with separated storage regions under process variations

  • 2025-12
  • Journal of Science: Advanced Materials and Devices
  • Elsevier B.V.
Article

Investigating Quasi-Nonvolatile Memory Behavior in Junctionless Field-Effect Transistors with SOI-Like Structure

  • Lee, Sang Ho ; 
  • Park, Jin ; 
  • Yoon, Young Jun ; 
  • Kang, In Man
  • 2025-11-21
  • Silicon
  • SPRINGER
Article

Structural Optimization and Trap Effects on the Output Performance of 4H-SiC Betavoltaic Cell

  • Kim, Kyeong Min ; 
  • Kang, In Man ; 
  • Seo, Jae Hwa ; 
  • Yoon, Young Jun ; 
  • Kim, Kibeom
  • 2025-10-24
  • NANOMATERIALS
  • MDPI
Article

Impact of Grain Boundaries on Zero-Temperature Coefficient Characteristics in a 3D-Stacked Transistor

  • Kim, Kyung Hee ; 
  • Kang, In Man ; 
  • Yoon, Young Jun ; 
  • Kim, Kibeom
  • 2025-08-31
  • ELECTRONICS
  • MDPI
Article

Fabrication of AlGaN/GaN HEMT using TMAH pre-treatment and analysis of electrical characteristics by proton irradiation

  • Park, Jin ; 
  • Lee, Sang Ho ; 
  • Kang, In Man ; 
  • Yoon, Young Jun
  • 2025-07
  • Current Applied Physics
  • ELSEVIER
Article

Optimization of One-transistor (1T) DRAM Using Device Parameters-dependent Zero-temperature Coefficient Point

  • Kim, Kyung Hee ; 
  • Kim, Kyeong Min ; 
  • Kim, Yeong Hwan ; 
  • Im, Jong Beom ; 
  • Choi, Gyu Ho ; 
  • ... Kang, In Man ; 
  • 외 1명
  • 2025-06
  • JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
  • IEEK PUBLICATION CENTER
Article

Design of a gate-all-around arch-shaped tunnel-field-effect-transistor-based capacitorless DRAM

  • 2025-04-02
  • DISCOVER NANO
  • SPRINGER
Article

Enhancing the nonvolatile properties of sol-gel-processed Y2O3 RRAM devices by suppressing oxygen vacancy formation

  • 2025-03-15
  • Materials Science in Semiconductor Processing
  • ELSEVIER SCI LTD
Article

Design and analysis of quasi-vertical multi-fin GaN power devices based on epitaxially grown GaN-on-sapphire

  • Hong, Jeong Woo ; 
  • Lee, Sang Ho ; 
  • Park, Jin ; 
  • Kim, Min Seok ; 
  • Bae, Seung Ji ; 
  • ... Kang, In Man ; 
  • 외 2명
  • 2025-03
  • JOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES
  • VIETNAM NATL UNIV
Article

Electrically and environmentally stable nitric acid-assisted SnO2 films for the active channel layer of thin-film transistors

  • 2025-03
  • MATERIALS TODAY ADVANCES
  • ELSEVIER
12345 끝