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2022 ~ 2025
2022 2025
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전체 33건 중 21번부터 30번까지의 결과를 표시합니다.
2023
Article
Analytical and Physical Investigation on Source Resistance in InxGa1−xAs Quantum-Well High-Electron-Mobility Transistors
- Yoo, Ji-hoon ;
- Lee, In-geun ;
- Tsutsumi, Takuya ;
- Sugiyama, Hiroki ;
- Matsuzaki, Hideaki ;
- ... Kim, Daehyun ;
- 외 1명
- 2023
- Micromachines
- MDPI
2022
Article
Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity
- Chakraborty, Surajit ;
- Amir, Walid ;
- Shin, Ju-Won ;
- Shin, Ki-Yong ;
- Cho, Chu-Young ;
- ... Kim, Dae-Hyun ;
- 외 7명
- 2022-12
- Materials
- MDPI
Article
Extraction of effective mobility of In0.8Ga0.2As/In0.52Al0.48As quantum well high-electron-mobility transistors on InP substrate
- Park, Wan-Soo ;
- Kim, Jun-Gyu ;
- Yun, Seung-Won ;
- Jeong, Hyeon-Seok ;
- Jo, Hyeon-Bhin ;
- ... Kim, Dae-Hyun ;
- 외 4명
- 2022-11
- Solid-State Electronics
- PERGAMON-ELSEVIER SCIENCE LTD
Article
Lg= 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets
- Jo, Hyeon Bhin ;
- Lee, In-geun ;
- Baek, Ji-min ;
- Lee, Sang-tae ;
- Choi, Su-min ;
- ... Kim, D. H. ;
- 외 16명
- 2022
- Digest of Technical Papers - Symposium on VLSI Technology
- Institute of Electrical and Electronics Engineers Inc.
Article
Vertical homo-junction In0.53Ga0.47As tunneling field-effect transistors with minimum subthreshold swing of 52 mV/decade
- Baek, Ji-min ;
- Kim, Hyojin ;
- Yoo, Ji-hoon ;
- Shin, Ju-won ;
- Shin, Ki-yong ;
- ... Kim, Daehyun ;
- 외 6명
- 2022
- Solid-State Electronics
- Elsevier Ltd
Article
Constant Voltage Stress (CVS) and Hot Carrier Injection (HCI) Degradations of Vertical Double-date InGaAs TFETs for Bio Sensor Applications
- Baek, Ji-min ;
- Kim, Daehyun
- 2022
- 센서학회지
- Korean Sensors Society
Article
The Variation of Schottky Barrier Height Induced by the Phase Separation of InAlAs Layers on InP HEMT Devices
- Lee, Sang-tae ;
- Kong, Minwoo ;
- Jang, Hyunchul ;
- Song, Changhun ;
- Kim, Shinkeun ;
- ... Kim, Daehyun ;
- 외 4명
- 2022
- Crystals
- MDPI
Article
On the universality of drain-induced-barrier-lowering in field-effect transistors
- Choi, Su-Min ;
- Jo, Hyeon-Bhin ;
- Yun, Do-Young ;
- Kim, Jun-Gyu ;
- Park, Wan-Soo ;
- ... Kim, Dae-Hyun ;
- 외 8명
- 2022
- 2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM
- IEEE
Article
3-levels-stacked InxGa1-xAs Multi-Bridge Channel Field-Effect-Transistors
- Lee, In-Geun ;
- Jo, Hyeon-Bhin ;
- Yoo, Ji-Hoon ;
- Lee, Jae-Hak ;
- Kim, Dae-Hyun
- 2022
- 2022 INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT)
- IEEE
Article
Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts
- Lee, In-geun ;
- Baek, Ji-min ;
- Jo, Hyeon Bhin ;
- Lee, Sang-tae ;
- Choi, Su-min ;
- ... Kim, Daehyun ;
- 외 13명
- 2022
- Electronics (Switzerland)
- MDPI