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자료 필터
자료유형
발행연도
2022 ~ 2025
2022 2025
키워드
언어
전체 33건 중 1번부터 10번까지의 결과를 표시합니다.
2025
Article
Cryogenic In0.8Ga0.2As Quantum-Well High-Electron Mobility Transistors from Lowpower Quantum Computing to Tera-Hz Applications
- Son, Seungwoo ;
- Yu, Min-seo ;
- Son, Sangpyeong ;
- Lee, In-geun ;
- Park, Wan-soo ;
- ... Kim, D. H. ;
- 외 11명
- 2025
- Digest of Technical Papers - Symposium on VLSI Technology
- Institute of Electrical and Electronics Engineers Inc.
2024
Article
Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG=0.15 μm GaN high-electron-mobility transistors for X-band applications
- Chang, Sung-Jae ;
- Jeong, Hyeon-Seok ;
- Jung, Hyun-Wook ;
- Choi, Su-Min ;
- Choi, Il-Gyu ;
- ... Kim, Dae-Hyun ;
- 외 6명
- 2024-12
- ETRI Journal
- WILEY
Article
High-performance uniform stepper-based InP double-heterojunction bipolar transistor (DHBT) on a 3-inch InP substrate
- Heon Shin, Seung ;
- Jeong, Hyeon-seok ;
- Kim, Yonghyun ;
- Jeon, Yong-soo ;
- Beak, Ji-min ;
- ... Kim, Daehyun ;
- 외 6명
- 2024-07
- Solid-State Electronics
- Elsevier Ltd
Article
Improved frequency performance in AlGaN/GaN HEMTs on Si using hydrogen silsesquioxane-assisted gate
- Jung, Hyun-Wook ;
- Choi, Il-Gyu ;
- Kim, Do-Hyun ;
- Jung, Hyeon-Seok ;
- Choi, Su-Min ;
- ... Kim, Dae-Hyun ;
- 외 5명
- 2024-02
- Materials Science in Semiconductor Processing
- ELSEVIER SCI LTD
Article
Single-Power-Supply Compatible Cryogenic In0.8Ga0.2As Quantum-well HEMTs with Record Combination of high-frequency and low-noise performance for quantum-computins applications
- Yoo, Ji-hoon ;
- Jeon, Yong-soo ;
- Son, Seungwoo ;
- Lee, In-geun ;
- Jo, Hyeon Bhin ;
- ... Kim, Daehyun ;
- 외 17명
- 2024
- Digest of Technical Papers - Symposium on VLSI Technology
- Institute of Electrical and Electronics Engineers Inc.
Article
5-level stacked In0.53Ga0.47As Multi-Bridged Channel Field-Effect Transistors
- Yoo, Ji-hoon ;
- Jo, Hyeon Bhin ;
- Lee, In-geun ;
- Choi, Su-min ;
- Kim, Hyojin ;
- ... Kim, D. H. ;
- 외 11명
- 2024
- CS Mantech
Article
Improved thermal reliability in base contact of full 3-inch InP Double-HBTs with fT and fmax in excess of 300 GHz
- Lee, In-geun ;
- Jeon, Yong-soo ;
- Kim, Yonghyun ;
- Yun, Jacob ;
- Kim, Ted ;
- ... Kim, Daehyun ;
- 외 4명
- 2024
- CS Mantech
Article
Ballistic transport in state-of-the art In0.65Ga0.35As/In0.52Al0.48As quantum-well high-electron-mobility transistors at room and cryogenic temperatures
- Son, Seungwoo ;
- Lee, In-geun ;
- Yu, Min-seo ;
- Choi, Su-min ;
- Jeon, Yong-soo ;
- ... Kim, Daehyun ;
- 외 6명
- 2024
- Technical Digest - International Electron Devices Meeting
- Institute of Electrical and Electronics Engineers Inc.
Article
Characterization of AlGaN/GaN HEMTs on 4-inch SiC substrate at Cryogenic temperature
- Park, Wan-soo ;
- Lee, H. J. ;
- Kim, Hyojin ;
- Lee, Jaehak ;
- Yang, Kyounghoon ;
- ... Kim, Daehyun
- 2024
- CS Mantech
2023
Article
Precise channel temperature prediction in AlGaN/GaN HEMTs via closed-form empirical expression
- Chakraborty, Surajit ;
- Shin, Ju-Won ;
- Amir, Walid ;
- Shin, Ki-Yong ;
- Hoshi, Takuya ;
- ... Kim, Dae-Hyun ;
- 외 3명
- 2023-12
- Solid-State Electronics
- PERGAMON-ELSEVIER SCIENCE LTD