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자료 필터
자료유형
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2022 ~ 2025
2022 2025
키워드
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전체 33건 중 11번부터 20번까지의 결과를 표시합니다.
2023
Article
Performance Enhancement of AlGaN/GaN HEMT via Trap-State Improvement Using O2 Plasma Treatment
- Amir, Walid ;
- Shin, Ju-Won ;
- Shin, Ki-Yong ;
- Chakraborty, Surajit ;
- Cho, Chu-Young ;
- ... Kim, Dae-Hyun ;
- 외 7명
- 2023-06
- IEEE Transactions on Electron Devices
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article
Optimization of Channel Structures in InP HEMT Technology for Cryogenic Low-Noise and Low-Power Operation
- Cha, Eunjung ;
- Wadefalk, Niklas ;
- Moschetti, Giuseppe ;
- Pourkabirian, Arsalan ;
- Stenarson, Jorgen ;
- ... Kim, Dae-Hyun ;
- 외 2명
- 2023-05
- IEEE Transactions on Electron Devices
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article
Sub-50 nm Terahertz In0.8Ga0.2As Quantum-Well High-Electron-Mobility Transistors for 6G Applications
- Park, Wan-Soo ;
- Jo, Hyeon-Bhin ;
- Kim, Hyo-Jin ;
- Choi, Su-Min ;
- Yoo, Ji-Hoon ;
- ... Kim, Dae-Hyun ;
- 외 12명
- 2023-04
- IEEE Transactions on Electron Devices
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article
A New Methodology to Analyze Carrier Transport Properties for InxGa1-xAs Quantum-Well High-Electron Mobility Transistors From Transconductance in Saturation
- Kim, Hyo-Jin ;
- Yoo, Ji-Hoon ;
- Park, Wan-Soo ;
- Yun, Seung-Won ;
- Jo, Hyeon-Bhin ;
- ... Kim, Dae-Hyun ;
- 외 6명
- 2023-02
- IEEE Electron Device Letters
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article
Impact of Output Conductance on Current-Gain Cut-Off Frequency in InxGa1-xAs/In0.52Al0.48As Quantum-Well High-Electron-Mobility Transistors on InP Substrate
- Kim, Hyojin ;
- Lee, In-geun ;
- Jo, Hyeon Bhin ;
- Rho, Tae-beom ;
- Tsutsumi, Takuya ;
- ... Kim, Daehyun ;
- 외 4명
- 2023
- Electronics (Switzerland)
- MDPI
Article
Lg= 60 nm In0.53Ga0.47As MBCFETs: From gm-max= 13.7 mS/μm and Q = 180 to virtual-source modeling
- Yoo, Ji-hoon ;
- Jo, Hyeon Bhin ;
- Lee, In-geun ;
- Choi, Su-min ;
- Baek, Ji-min ;
- ... Kim, Daehyun ;
- 외 21명
- 2023
- Digest of Technical Papers - Symposium on VLSI Technology
- Institute of Electrical and Electronics Engineers Inc.
Article
A new methodology to extract saturation velocity of In0.53Ga0.47As QW HEMTs
- Kim, Hyojin ;
- Yoo, Ji-hoon ;
- Park, Wan-soo ;
- Jo, Hyeon Bhin ;
- Lee, In-geun ;
- ... Kim, Daehyun ;
- 외 9명
- 2023
- CS Mantech
Article
Lg = 25 nm In0.8Ga0.2As/In0.52Al0.48As High-Electron Mobility Transistors on InP Substrate with Both fT and fmax in Excess of 700 GHz
- Lee, In-geun ;
- Choi, Su-min ;
- Jo, Hyeon Bhin ;
- Yoo, Ji-hoon ;
- Kim, H. H. ;
- ... Kim, Daehyun ;
- 외 6명
- 2023
- CS Mantech
Article
Analytical model for the source resistance in advanced InxGa1-xAs/In0.52Al0.48As quantum-well high-electron-mobility transistors
- Yoo, Ji-hoon ;
- Lee, Jaehak ;
- Kim, Yonghyun ;
- Kim, Sang-kuk ;
- Yun, Jacob ;
- ... Kim, Daehyun ;
- 외 2명
- 2023
- CS Mantech
Article
A W-Band Low-Noise Amplifier in 50-nm InP HEMT Technology
- Mehraban, Haniye ;
- Park, Wan-Soo ;
- Jo, Hyeon-Bin ;
- Choi, Su-Min ;
- Kim, Dae-Hyun ;
- 외 4명
- 2023
- 2023 IEEE TEXAS SYMPOSIUM ON WIRELESS AND MICROWAVE CIRCUITS AND SYSTEMS, WMCS
- IEEE